2N3963 2n3964 silicon pnp transistors description: the central semiconductor 2N3963 and 2n3964 are silicon pnp transistors designed for general purpose applications. marking: full part number maximum ratings: (t a =25c) symbol 2N3963 2n3964 units collector-base voltage v cbo 80 45 v collector-emitter voltage v ceo 80 45 v emitter-base voltage v ebo 6.0 v continuous collector current i c 200 ma power dissipation (t c =25c) p d 1.2 w power dissipation p d 360 mw operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 146 c/w thermal resistance ja 486 c/w electrical characteristics: (t a =25c unless otherwise noted) 2N3963 2n3964 symbol test conditions min max min max units i cbo v cb =70v - 10 - - na i cbo v cb =40v - - - 10 na i ces v ce =70v - 10 - - na i ces v ce =40v - - - 10 na i ebo v eb =4.0v - 10 - 10 na bv cbo i c =10a 80 - 45 - v bv ces i c =10a 80 - 45 - v bv ceo i c =5.0ma 80 - 45 - v bv ebo i e =10a 6.0 - 6.0 - v v ce(sat) i c =10ma, i b =0.5ma - 0.25 - 0.25 v v ce(sat) i c =50ma, i b =5.0ma - 0.40 - 0.40 v v be(sat) i c =10ma, i b =0.5ma - 0.90 - 0.90 v v be(sat) i c =50ma, i b =5.0ma - 0.95 - 0.95 v h fe v ce =5.0v, i c =1.0a 60 - 180 - h fe v ce =5.0v, i c =10a 100 300 250 500 h fe v ce =5.0v, i c =10a, t a =-55c 40 - 100 - h fe v ce =5.0v, i c =100a 100 - 250 - h fe v ce =5.0v, i c =1.0ma 100 450 250 600 h fe v ce =5.0v, i c =1.0ma, t a =100c - 600 - 800 h fe v ce =5.0v, i c =10ma 100 - 200 - h fe v ce =5.0v, i c =50ma 90 - 180 - h fe v ce =5.0v, i c =50ma, t a =-55c 45 - 90 - to-18 case r0 (17-may 2013) www.centralsemi.com
2N3963 2n3964 silicon pnp transistors lead code: 1) emitter 2) base 3) collector marking: full part number to-18 case - mechanical outline electrical characteristics - continued: (t a =25c unless otherwise noted) 2N3963 2n3964 symbol test conditions min max min max units f t v ce =5.0v, i c =0.5ma, f=20mhz 40 - 50 - mhz c ob v cb =5.0v, i e =0, f=1.0mhz - 6.0 - 6.0 pf c ib v eb =0.5v, i c =0, f=1.0mhz - 15 - 15 pf h ie v ce =5.0v, i c =1.0ma, f=1.0khz 2.5 17 6.0 20 k h re v ce =5.0v, i c =1.0ma, f=1.0khz - 10 - 10 10 -4 h fe v ce =5.0v, i c =1.0ma, f=1.0khz 100 550 250 700 h oe v ce =5.0v, i c =1.0ma, f=1.0khz 5.0 40 5.0 50 s nf v ce =5.0v, i c =20ma, bw=15.7khz - 3.0 - 2.0 db nf v ce =5.0v, i c =20a, bw=1.5khz f=10khz, r s =10k - 3.0 - 2.0 db nf v ce =5.0v, i c =20a, bw=150hz f=1.0khz, r s =10k - 3.0 - 2.0 db nf v ce =5.0v, i c =20a, bw=15hz f=100hz, r s =10k - 10 - 4.0 db nf v ce =5.0v, i c =20a, bw=2.0hz f=10hz, r s =10k - - - 8.0 db www.centralsemi.com r0 (17-may 2013)
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